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Memory

Memory, which is commonly referred to as RAM (Random Access Memory), is a temporary (Volatile) storage area utilized by the CPU.
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AQD-D3L2GN16-SQ1
Advantech 2G DDR3-1600 240Pin 256MX8 1.35V Unbuffered Samsung Chip
  1. DDR3 1600Mhz Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

$21.00

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AQD-D3L4GN16-SG1
Advantech 4G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Samsung Chip
  1. DDR3 1600Mhz Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

$27.00

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AQD-D3L8GN16-SG1
Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Samsung Chip
  1. DDR3 1600Mhz Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

$52.00

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96D4-16G2933ER-MI
Micron 16G DDR4-2933 288Pin 2Gx4 1.2V Registered
  1. DDR4 2933Mhz Registered DIMM
  2. Supports ECC error detection and correction
  3. 1.2V Power Consumption
  4. Low-power auto self- refresh (LPASR)
  5. Provides better reliability, availability and serviceability (RAS) and improves data integrity

$119.00

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96D4-16G3200NN-MI
Micron 16B DDR4-3200 288Pin 1Gx8 1.2V Unbuffered
  1. DDR4 3200Mhz Unbuffered DIMM
  2. 1.2V Power Consumption
  3. Low-power auto self- refresh (LPASR)
  4. Data bus inversion (DBI) for data bus
  5. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

$116.00

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96D4-32G2933ER-MI
Micron 32G DDR4-2933 288Pin 2Gx4 1.2V Registered
  1. DDR4 2933Mhz Registered DIMM
  2. Supports ECC error detection and correction
  3. 1.2V Power Consumption
  4. Low-power auto self- refresh (LPASR)
  5. Provides better reliability, availability and serviceability (RAS) and improves data integrity

$216.00

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96D4-4G3200NN-MI
Micron 4GB DDR4-3200 288Pin 512Mx16 1.2V Unbuffered
  1. DDR4 3200Mhz Unbuffered DIMM
  2. 1.2V Power Consumption
  3. Low-power auto self- refresh (LPASR)
  4. Data bus inversion (DBI) for data bus
  5. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

$32.00

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96D4-8G2933ER-MI
Micron 8G DDR4 2933 288PIN 1GbX8 REG 1.2V
  1. DDR4 2933Mhz Registered DIMM
  2. Supports ECC error detection and correction
  3. 1.2V Power Consumption
  4. Low-power auto self- refresh (LPASR)
  5. Provides better reliability, availability and serviceability (RAS) and improves data integrity

$82.00

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96D4-8G3200NN-MI
Micron 8GB DDR4-3200 288Pin 1Gx8 1.2V Unbuffered
  1. DDR4 3200Mhz Unbuffered DIMM
  2. 1.2V Power Consumption
  3. Low-power auto self- refresh (LPASR)
  4. Data bus inversion (DBI) for data bus
  5. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

$58.00

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AQD-D4U16N24-SE
Advantech 16G DDR4-2400 288Pin 1GX8 1.2V Unbuffered Samsung Chip
  1. DDR4-2400 Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.2V power consumption
  4. Samsung original chip

$100.00

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AQD-D4U4GN24-SG
Advantech 4G DDR4-2400 288Pin 512X8 1.2V Unbuffered Samsung Chip
  1. DDR4-2400 Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.2V power consumption
  4. Samsung original chip

$29.00

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AQD-D4U8GN24-SE
Advantech 8G DDR4-2400 288Pin 1GX8 1.2V Unbuffered Samsung Chip
  1. DDR4-2400 Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.2V power consumption
  4. Samsung original chip

$52.00

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AQD-SD3L2GN16-SQ1
Advantech 2G SO-DDR3-1600 204Pin 256MX8 1.35V Unbuffered Samsung Chip
  1. DDR3 1600Mhz Unbuffered SO-DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

$21.00

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AQD-SD3L4GN16-SG1
Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip
  1. DDR3 1600Mhz Unbuffered SO-DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

$30.00

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AQD-SD3L8GN16-SG1
Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip
  1. DDR3 1600Mhz Unbuffered SO-DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

$52.00

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96SD4-16G3200NN-MI
Micron 16B SO-DDR4-3200 260Pin 1Gx8 1.2V Unbuffered
  1. DDR4 3200Mhz Unbuffered DIMM
  2. SODIMM 260pin / UDIMM 288pin
  3. 1.2V Power Consumption
  4. Low-power auto self- refresh (LPASR)
  5. Data bus inversion (DBI) for data bus
  6. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

$116.00

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96SD4-4G3200NN-MI
Micron 4GB SO-DDR4-3200 260Pin 512Mx16 1.2V Unbuffered
  1. DDR4 3200Mhz Unbuffered DIMM
  2. SODIMM 260pin / UDIMM 288pin
  3. 1.2V Power Consumption
  4. Low-power auto self- refresh (LPASR)
  5. Data bus inversion (DBI) for data bus
  6. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

$32.00

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96SD4-8G3200NN-MI
Micron 8GB SO-DDR4-3200 260Pin 1Gx8 1.2V Unbuffered
  1. DDR4 3200Mhz Unbuffered DIMM
  2. SODIMM 260pin / UDIMM 288pin
  3. 1.2V Power Consumption
  4. Low-power auto self- refresh (LPASR)
  5. Data bus inversion (DBI) for data bus
  6. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

$58.00

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AQD-SD4U16N24-SE
Advantech 16G SO-DDR4-2400 260Pin 1GX8 1.2V Unbuffered Samsung Chip
  1. DDR4-2400 Unbuffered SO-DIMM
  2. 30μ" gold plating thickness
  3. 1.2V power consumption
  4. Samsung original chip

$100.00

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AQD-SD4U4GN24-SG
Advantech 4G SO-DDR4-2400 260Pin 512X8 1.2V Unbuffered Samsung Chip
  1. DDR4-2400 Unbuffered SO-DIMM
  2. 30μ" gold plating thickness
  3. 1.2V power consumption
  4. Samsung original chip

$29.00

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